mar-05-2001 1 bar 67-02l 1 2 silicon pin diode preliminary data low loss rf switch rf attenuator low series capacitance and resistance ultra small leadless package 12 eha07001 type marking pin configuration package bar 67-02l tt 1 = c 2 = a - tslp-2 maximum ratings parameter symbol value unit diode reverse voltage v r 150 v forward current i f 200 ma operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point r thjs tbd k/w
mar-05-2001 2 bar 67-02l electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 150 - - v reverse current v r = 100 v i r - - 20 na forward voltage i f = 50 ma v f - 0.95 1.2 v ac characteristics diode capacitance v r = 5 v, f = 1 mhz v r = 0 v, f = 100 mhz c t - - 0.35 0.35 0.55 0.9 pf zero bias conductance v r = 0 v, f = 100 mhz g p - 220 - s forward resistance i f = 5 v, f = 100 mhz r f - 1.5 1.8 charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 0.7 - s case capacitance f = 1 mhz c c - 0.05 - pf series inductance l s - 0.6 - nh
mar-05-2001 3 bar 67-02l diode capacitance c t = (v r ) f = parameter 0 5 10 15 20 25 v 35 v r 0 0.1 0.2 0.3 0.4 0.5 0.6 pf 0.8 c t 100mhz 1mhz forward resistance r f = ( i f ) f = 100mhz 10 -3 10 -2 10 -1 10 0 10 1 10 3 ma i f -1 10 0 10 1 10 2 10 3 10 ohm r f forward current i f = ( v f ) t a = 25c 0.5 0.6 0.7 0.8 0.9 1 v 1.2 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f
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